schottky diode features z low forward voltage z fast switching BAS40W marking :43h BAS40W-04 marking : 44 BAS40W-05 marking : 45 BAS40W-06 marking : 46 maximum ratings @t a =25 parameter symbol limits unit peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 40 v forward continuous current i fm 200 ma power dissipation pd 200 mw storage temperature t stg -55-150 electrical characteristics@t a =25 parameter symbol min. typ. max. unit conditions reverse breakdown voltage v (br)r 40 v ir=10a v f1 0.38 v i f =1ma forward voltage v f2 1 v i f =40ma reverse current i r 0.2 a v r =30v diode capacitance c d 5 pf v r =0,f=1mhz reverse recovery time t rr 5 ns i f =i r =10ma irr=0.1xi r ,r l =100 ? sot-323 ki semiconductor co. sot-323 plastic-encapsulate diodes BAS40W series 1
typical characteristics BAS40W series 2
|
